LBC807-25WT3G - Leshan Radio Company

LBC807-25WT3G General Purpose Transistors

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO(max) = -45 V. ƽGeneral purpose switching and amplification. ƽPNP complement: LBC807 Series. ƽWe declare that the material of product compliance with RoHS requirements. ƽS- Prefix for Automotive and Other Appl.

Features

Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 1. FR
  –5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Symbol PD R θJA PD R θJA T J , Tstg Max 150 1.2 833 200 1.6 625
  –55to+150 Unit mW mW/°C °C/W mW mW/°C °C/W °C Rev.O 1/3 LESHAN RADIO COMPANY, LTD. LBC807-25WT1G S-LBC807-25WT1G ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted.) Characteristic Symbol Min OFF CHARACTERISTICS Collector
  –E.