Features
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V V MHz Test Condition IC=100µA, IB=0 VCB=30V, IE=0 VEB=10V, IC=0 Min. 30 Max. 100 100 Units V nA nA
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSP13/14
Typical Characteristics
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
1M
10
VCE = 5V
IC = 1000 IB
hFE, DC CURRENT GAIN
100k
V BE(sat)
1
V CE(sat)
10k
1k
1
10
100
1000
0.1 10 100
IC [mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
fT[MHz], CURRENT GAI...
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