KSH45H11I - INCHANGE

KSH45H11I PNP Transistor

·Lead formed for surface mount applications(NO suffix) ·Straight lead(IPAK,“－I”suffix) ·Electrically similar to popular KSE45H ·Fast switching speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·General purpose power and switching such as output or driver stages in applications ABSOLUTE MAXIMUM RATINGS(Ta.

Features

PARAMETER CONDITIONS V(BR)CEO
* Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 VCE(sat) VBE(sat) ICEO Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current IC=-8A; IB= -400mA IC=-8A; IB= -800mA VCE=- 80V; IE= 0 IEBO Emitter Cutoff Current VEB=- 5V; IC= 0 hFE1 DC Current Gain hFE2 DC Current Gain IC= -2A; VCE= -1V IC=- 4A; VCE= -1V fT Current-Gain—Bandwidth Product IC=- 0.5A; VCE= -10V MIN TYP MAX UNIT -80 V -1.0 V -1.5 V -10 uA -50 uA 60 40 40 MHz COB Output Capacitance
*:Pulse test PW≤300us,duty cycle≤2% IE= 0 ; V.