KSH112 - Fairchild Semiconductor

KSH112 NPN Transistor

KSH112 KSH112 D-PAK for Surface Mount Applications • • • • • High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, “ - I “ Suffix) Electrically Similar to Popular TIP112 1 D-PAK 1.Base 1 I-PAK 3.Emitter 2.Collector NPN Silicon Darlington Transistor Absolute Maximum Ratings TC=2.

Features

rent Emitter Cut-off Current
* DC Current Gain Test Condition IC = 30mA, IB = 0 VCE = 50V, IB = 0 VCB = 100V, IB = 0 VEB = 5V, IC = 0 VCE = 3V, IC = 0.5A VCE = 3V, IC = 2A VCE = 3V, IC = 4A IC = 2A, IB = 8mA IC = 4A, IB = 40mA IC = 4A, IB = 40mA VCE = 3A, IC = 2A VCE = 10V, IC = 0.75A VCB = 10V, IE = 0 f = 0.1MHz 25 100 500 1000 200 Min. 100 Max. 20 20 2 12K 2 3 4 2.8 V V V V MHz pF Units V µA µA mA VCE(sat) VBE(sat) VBE(on) fT Cob
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
* Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance
* Pulse Test.