KSH41C KSH41C General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications • Lead Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP41 and TIP41C 1 D-PAK 1.Base 1 I-PAK 3.Emitter 2.Collector NPN Epitaxial Silicon Transistor Absolute Maximum Rati.
DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter On Voltage Current Gain Bandwidth Product Test Condition IC = 30mA, IB = 0 VCE = 60V, IB = 0 VCE = 100V, VBE = 0 VBE = 5V, IC = 0 VCE = 4V, IC = 0.3A VCE = 4V, IC = 3A IC = 6A, IB = 600mA VCE = 6A, IC = 4A VCE = 10V, IC = 500mA 3 30 15 Min. 100 Max. 50 10 0.5 75 1.5 2 V V MHz Units V µA uA mA
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002
KSH41C
Typical Characteristics
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
1000
10
VCE = 2V
IC = 10 IB
hFE, DC CURRENT GAIN
.
·Lead formed for surface mount applications(NO suffix) ·Straight lead(IPAK,“-I”suffix) ·Electrically similar to popular .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | KSH42C |
Fairchild Semiconductor |
PNP Transistor | |
2 | KSH42C |
INCHANGE |
PNP Transistor | |
3 | KSH44H11 |
INCHANGE |
NPN Transistor | |
4 | KSH44H11 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
5 | KSH44H11I |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
6 | KSH44H11I |
INCHANGE |
NPN Transistor | |
7 | KSH45H11 |
Fairchild Semiconductor |
PNP Transistor | |
8 | KSH45H11I |
INCHANGE |
PNP Transistor | |
9 | KSH47 |
INCHANGE |
NPN Transistor | |
10 | KSH47 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
11 | KSH112 |
INCHANGE |
NPN Transistor | |
12 | KSH112 |
Fairchild Semiconductor |
NPN Transistor |