KSH42C KSH42C General Purpose Amplifier Low Speed Switching Applications • Lead Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP42C 1 D-PAK 1.Base 1 I-PAK 3.Emitter 2.Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO .
ration Voltage
* Base-Emitter On Voltage Current Gain Bandwidth Product Test Condition IC = - 30mA, IB = 0 VCE = -60V, IB = 0 VCE = -100V, VBE = 0 VBE = -5V, IC = 0 VCE = -4V, IC = -0.3A VCE = -4V, IC = -3A IC = -6A, IB = -600mA VCE = -6A, IC = -4A VCE = -10V, IC = -500mA 3 30 15 Min. -100 Max. -50 -10 -0.5 75 -1.5 -2 V V MHz Units V µA µA mA
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002
KSH42C
Typical Characteristics
1000
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
-10
VCE = -2V
IC = 10 IB
hFE, DC CURRENT GAIN
100
-1
V BE(sat.
·Lead formed for surface mount applications(NO suffix) ·Straight lead(IPAK,“-I”suffix) ·Electrically similar to popular .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | KSH41C |
Fairchild Semiconductor |
NPN Transistor | |
2 | KSH41C |
INCHANGE |
NPN Transistor | |
3 | KSH44H11 |
INCHANGE |
NPN Transistor | |
4 | KSH44H11 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
5 | KSH44H11I |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
6 | KSH44H11I |
INCHANGE |
NPN Transistor | |
7 | KSH45H11 |
Fairchild Semiconductor |
PNP Transistor | |
8 | KSH45H11I |
INCHANGE |
PNP Transistor | |
9 | KSH47 |
INCHANGE |
NPN Transistor | |
10 | KSH47 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
11 | KSH112 |
INCHANGE |
NPN Transistor | |
12 | KSH112 |
Fairchild Semiconductor |
NPN Transistor |