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www.DataSheet4U.com KSD5701 KSD5701 High Voltage Color Display Horizontal Deflection Output (Damper Diode Built In) • High Collector-Base Voltage : VCBO=1500V • High Switching Speed : tF = 0.4µs (Max.) • For Color TV B Equivalent Circuit C 1 50Ω typ. E TO-3PF 2.Collector 3.Emitter 1.Base NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ra.
ain Bandwidth Product Damper Diode Turn On Voltage Fall Time Test Condition VCB = 800V, IE = 0 VEB = 4V, IC = 0 VCE = 5V, IC = 0.5A VCE = 5V, IC = 2.5A IC = 2.5A, IB = 0.8A IC = 2.5A, IB = 0.8A VCE = 10V, IC = 0.5A IF = 3.5A VCC = 200V, IC = 3A IB1 = 0.8A, IB2 = - 1.6A RL = 66.7Ω 3 2 0.4 Min. 40 10 2.5 Typ. Max. 10 250 30 5 1.5 V V MHz V µs Units µA mA ©2000 Fairchild Semiconductor International DataSheet4U.com Rev. A, February 2000 DataSheet 4 U .com www.DataSheet4U.com KSD5701 Typical Characteristics 8 100 VCE = 5V 7 IC[A], COLLECTOR CURRENT 5 4 3 IB = 2.0A IB = 1.8A IB = 1.6A .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | KSD5702 |
Fairchild Semiconductor |
NPN Transistor |
|
| 2 | KSD5703 |
NJS |
Silicon NPN Power Transistor |
|
| 3 | KSD5703 |
Fairchild Semiconductor |
NPN Transistor |
|
| 4 | KSD5703 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 5 | KSD5707 |
Fairchild Semiconductor |
NPN Transistor |
|
| 6 | KSD5000 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 7 | KSD5001 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 8 | KSD5001 |
Samsung semiconductor |
NPN Triple Diffused Planar Silicon Transistor |
|
| 9 | KSD5002 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 10 | KSD5003 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 11 | KSD5003 |
Samsung semiconductor |
NPN Triple Diffused Planar Silicon Transistor |
|
| 12 | KSD5004 |
Samsung semiconductor |
NPN Triple Diffused Planar Silicon Transistor |
|