KSC5026M — NPN Silicon Transistor KSC5026M NPN Silicon Transistor January 2011 Features • High Voltage and High Reliability • High Speed Switching • Wide SOA 1 TO-126 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VCBO VCEO VEBO IC ICP IB PC TJ TSTG Collector-Base Voltage Collector-Emitter .
• High Voltage and High Reliability
• High Speed Switching
• Wide SOA
1
TO-126
1. Emitter 2.Collector 3.Base
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VCBO VCEO VEBO
IC ICP IB PC TJ TSTG
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature
Value 1100 800
7 1.5 5 0.8 20 150 - 55 to 150
Units V V V A A A W °C °C
Package Marking and Ordering Information
Part Number
Marking
Package
Packing Method
Rem.
·Low Collector Saturation Voltage ·High breakdown voltage ·Small reverse transfer capacitance and excellent high frequen.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | KSC5026 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
2 | KSC5026 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
3 | KSC5020 |
Samsung semiconductor |
NPN Epitaxial Silicon Transistor | |
4 | KSC5020 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
5 | KSC5020 |
Samsung semiconductor |
NPN Epitaxial Silicon Transistor | |
6 | KSC5021 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
7 | KSC5021 |
Samsung semiconductor |
NPN Epitaxial Silicon Transistor | |
8 | KSC5021 |
SavantIC |
SILICON POWER TRANSISTOR | |
9 | KSC5021F |
INCHANGE |
NPN Transistor | |
10 | KSC5021F |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
11 | KSC5021F |
JCET |
NPN Transistor | |
12 | KSC5022 |
Inchange Semiconductor |
Silicon NPN Power Transistor |