KSC5026 - Inchange Semiconductor

KSC5026 Silicon NPN Power Transistor

·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 800V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base.

Features

CONDITIONS IC= 0.75A ;IB1= -IB2= 0.15A; L= 5mH,Clamped IC= 1mA; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 0.75A; IB= 0.15A VBE(sat) Base-Emitter Saturation Voltage IC= 0.75A; IB= 0.15A ICBO Collector Cutoff Current VCB= 800V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC=0 hFE-1 DC Current Gain IC= 0.1A; VCE= 5V hFE-2 DC Current Gain IC= 0.5A; VCE= 5V COB Output Capacitance fT Current-Gain—Bandwidth Product IE= 0; VCB= 10V; ftest= 1MHz IC= 0.1A ; V.