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KSC5026M |
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| Part Number | KSC5026M |
| Manufacturer | INCHANGE |
| Description | ·Low Collector Saturation Voltage ·High breakdown voltage ·Small reverse transfer capacitance and excellent high frequency characteristic ·100% avalanche tested ·Minimum Lot-to-Lot variations for robu... |
| Features |
n voltage IC=5mA ; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ; IC=0
VCE(sat) Collector-Emitter Saturation Voltage IC=750mA; IB= 150mA
VBE(sat) Base-Emitter Saturation Voltage
IC=750mA; IB= 150mA
ICBO
Collector Cutoff Current
VCB=800V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 100mA ; VCE=5V
hFE-2
DC Current Gain
IC= 500mA ; VCE=5V
fT
Current-Gain—Bandwidth Product
IE= -100mA; VCE= 10V
hFE Classifications N R 10-20 15-30 O 20-40 KSC5026M MIN TYP. MAX UNIT 1100 V 800 V 5 V 2.0 V 1.5 V 10 μA 10 μA 10 40 8 15... |
| Document |
 KSC5026M Data Sheet
PDF 196.04KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | KSC5026 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
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| 2 | KSC5026 |
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| 3 | KSC5026M |
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| 4 | KSC5020 |
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| 5 | KSC5020 |
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