The KM644002B is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The KM644002B uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG′s advanced CMOS process and designed for high-speed circuit technol.
• Fast Access Time 10,12,15ns(Max.)
• Low Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS) : 10mA(Max.) Operating KM644002B - 10 : 195mA(Max.) KM644002B - 12 : 190mA(Max.) KM644002B - 15 : 185mA(Max.)
• Single 5.0V±10% Power Supply
• TTL Compatible Inputs and Outputs
• I/O Compatible with 3.3V Device
• Fully Static Operation - No Clock or Refresh required
• Three State Outputs
• Center Power/Ground Pin Configuration
• Standard Pin Configuration KM644002BJ : 32-SOJ-400 KM644002BT : 32-TSOP2-400F
PRELIMINARY CMOS SRAM
GENERAL DESCRIPTION
The KM644002B is a 4,194,304-bit high-speed Static Ra.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | KM644002 |
Samsung |
1M X 4 Bit (with Oe) high-speed CMOS Static RAM | |
2 | KM644002A |
Samsung Semiconductor |
1M X 4 Bit (with Oe)high-speed CMOS Static RAM | |
3 | KM644002C |
Samsung Semiconductor |
1M X 4 Bit (with Oe)high Speed CMOS Static RAM | |
4 | KM644002L |
Samsung |
1M X 4 Bit (with Oe) high-speed CMOS Static RAM | |
5 | KM641001A |
Samsung Semiconductor |
CMOS SRAM | |
6 | KM641001B |
Samsung Semiconductor |
CMOS SRAM | |
7 | KM641001BL |
Samsung Semiconductor |
CMOS SRAM | |
8 | KM641003A |
Samsung Semiconductor |
CMOS SRAM | |
9 | KM641003B |
Samsung Semiconductor |
CMOS SRAM | |
10 | KM641003C |
Samsung Semiconductor |
CMOS SRAM | |
11 | KM6161000B |
Samsung Electronics |
64K X 16-Bit Low Power CMOS Static RAM | |
12 | KM6161002A |
Samsung |
CMOS SRAM |