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The KM641003B is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The KM641003B uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG ′s advanced CMOS process and designed for high-speed circuit technolo.
• Fast Access Time 8,10,12ns(Max.)
• Low Power Dissipation Standby (TTL) : 50 mA(Max.) (CMOS) : 10 mA(Max.) Operating KM641003B - 8 : 150 mA(Max.) KM641003B - 10 : 145 mA(Max.) KM641003B - 12 : 140 mA(Max.)
• Single 5.0V ±10% Power Supply
• TTL Compatible Inputs and Outputs
• I/O Compatible with 3.3V Device
• Fully Static Operation - No Clock or Refresh required
• Three State Outputs
• Center Power/Ground Pin Configuration
• Standard Pin Configuration KM641003BJ : 32-SOJ-400
Preliminary PRELIMINARY CMOS SRAM
GENERAL DESCRIPTION
The KM641003B is a 1,048,576-bit high-speed Static Random Access .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | KM641003A |
Samsung Semiconductor |
CMOS SRAM |
|
| 2 | KM641003C |
Samsung Semiconductor |
CMOS SRAM |
|
| 3 | KM641001A |
Samsung Semiconductor |
CMOS SRAM |
|
| 4 | KM641001B |
Samsung Semiconductor |
CMOS SRAM |
|
| 5 | KM641001BL |
Samsung Semiconductor |
CMOS SRAM |
|
| 6 | KM644002 |
Samsung |
1M X 4 Bit (with Oe) high-speed CMOS Static RAM |
|
| 7 | KM644002A |
Samsung Semiconductor |
1M X 4 Bit (with Oe)high-speed CMOS Static RAM |
|
| 8 | KM644002B |
Samsung Semiconductor |
1M X 4 Bit (with Oe)high Speed CMOS Static RAM |
|
| 9 | KM644002C |
Samsung Semiconductor |
1M X 4 Bit (with Oe)high Speed CMOS Static RAM |
|
| 10 | KM644002L |
Samsung |
1M X 4 Bit (with Oe) high-speed CMOS Static RAM |
|
| 11 | KM6161000B |
Samsung Electronics |
64K X 16-Bit Low Power CMOS Static RAM |
|
| 12 | KM6161002A |
Samsung |
CMOS SRAM |
|