Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
The KM641001B is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The KM641001B/BL uses 4 common input and output lines and has at output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG′s advanced CMOS process and designed for high-speed circuit techno.
• Fast Access Time 15, 20ns(Max.)
• Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS) : 5mA(Max.) 1mA(Max) L-Ver. Only Operating KM641001B/BL - 15 : 120mA(Max.) KM641001B/BL - 20 : 118mA(Max.)
• Single 5.0V±10% Power Supply
• TTL Compatible Inputs and Outputs
• Fully Static Operation - No Clock or Refresh required
• Three State Outputs
• 2V Minimum Data Retention ; L-Ver. only
• Standard Pin Configuration KM641001B/BLJ : 28-SOJ-400A
FUNCTIONAL BLOCK DIAGRAM
Clk Gen.
A0 A1 A2 A3 A4 A5 A6 A7 A8
PIN CONFIGURATION(Top View)
A0 A1 A2 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 Vcc 27 A17 26 A16 25 .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | KM641001A |
Samsung Semiconductor |
CMOS SRAM |
|
| 2 | KM641001BL |
Samsung Semiconductor |
CMOS SRAM |
|
| 3 | KM641003A |
Samsung Semiconductor |
CMOS SRAM |
|
| 4 | KM641003B |
Samsung Semiconductor |
CMOS SRAM |
|
| 5 | KM641003C |
Samsung Semiconductor |
CMOS SRAM |
|
| 6 | KM644002 |
Samsung |
1M X 4 Bit (with Oe) high-speed CMOS Static RAM |
|
| 7 | KM644002A |
Samsung Semiconductor |
1M X 4 Bit (with Oe)high-speed CMOS Static RAM |
|
| 8 | KM644002B |
Samsung Semiconductor |
1M X 4 Bit (with Oe)high Speed CMOS Static RAM |
|
| 9 | KM644002C |
Samsung Semiconductor |
1M X 4 Bit (with Oe)high Speed CMOS Static RAM |
|
| 10 | KM644002L |
Samsung |
1M X 4 Bit (with Oe) high-speed CMOS Static RAM |
|
| 11 | KM6161000B |
Samsung Electronics |
64K X 16-Bit Low Power CMOS Static RAM |
|
| 12 | KM6161002A |
Samsung |
CMOS SRAM |
|