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KM641003C 256K x 4 Bit (with OE) High-Speed CMOS Static RAM FEATURES • Fast Access Time 12,15,20ns(Max.) • Low Power Dissipation Standby (TTL) : 30mA(Max.) (CMOS) : 5mA(Max.) Operating KM641003C - 12 : 70mA(Max.) KM641003C - 15 : 68mA(Max.) KM641003C - 20 : 65mA(Max.) • Single 5.0V±10% Power Supply • TTL Compatible Inputs and Outputs • I/O Compatible with 3.
• Fast Access Time 12,15,20ns(Max.)
• Low Power Dissipation Standby (TTL) : 30mA(Max.) (CMOS) : 5mA(Max.) Operating KM641003C - 12 : 70mA(Max.) KM641003C - 15 : 68mA(Max.) KM641003C - 20 : 65mA(Max.)
• Single 5.0V±10% Power Supply
• TTL Compatible Inputs and Outputs
• I/O Compatible with 3.3V Device
• Fully Static Operation - No Clock or Refresh required
• Three State Outputs
• Center Power/Ground Pin Configuration
• Standard Pin Configuration : KM641003CJ : 32-SOJ-400
Preliminary CCPCCCRCELIMINARY
The KM641003C is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 w.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | KM641003A |
Samsung Semiconductor |
CMOS SRAM |
|
| 2 | KM641003B |
Samsung Semiconductor |
CMOS SRAM |
|
| 3 | KM641001A |
Samsung Semiconductor |
CMOS SRAM |
|
| 4 | KM641001B |
Samsung Semiconductor |
CMOS SRAM |
|
| 5 | KM641001BL |
Samsung Semiconductor |
CMOS SRAM |
|
| 6 | KM644002 |
Samsung |
1M X 4 Bit (with Oe) high-speed CMOS Static RAM |
|
| 7 | KM644002A |
Samsung Semiconductor |
1M X 4 Bit (with Oe)high-speed CMOS Static RAM |
|
| 8 | KM644002B |
Samsung Semiconductor |
1M X 4 Bit (with Oe)high Speed CMOS Static RAM |
|
| 9 | KM644002C |
Samsung Semiconductor |
1M X 4 Bit (with Oe)high Speed CMOS Static RAM |
|
| 10 | KM644002L |
Samsung |
1M X 4 Bit (with Oe) high-speed CMOS Static RAM |
|
| 11 | KM6161000B |
Samsung Electronics |
64K X 16-Bit Low Power CMOS Static RAM |
|
| 12 | KM6161002A |
Samsung |
CMOS SRAM |
|