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www.DataSheet4U.com TECHNICAL DATA KK4019B Quad AND/OR Select Gate High-Voltage Silicon-Gate CMOS The KK4019B types consist of four AND/OR select gate configurations, each consisting of two 2-input AND gates driving a single 2-input gate. Selection is accomplished by control bits Sa and Sb .In addition to selection of either channel A or channel B informa.
H H
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KK4019B
MAXIMUM RATINGS
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Symbol VCC VIN VOUT IIN PD PD Tstg TL
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Parameter DC Supply Voltage (Referenced to GND) DC Input Voltage (Referenced to GND) DC Output Voltage (Referenced to GND) DC Input Current, per Pin Power Dissipation in Still Air, Plastic DIP+ SOIC Package+ Power Dissipation per Output Transistor Storage Temperature Lead Temperature, 1 mm from Case for 10 Seconds (Plastic DIP or SOIC Package)
Value -0.5 to +20 -0.5 to VCC +0.5 -0.5 to VCC +0.5 ±10 750 500 100 -65 to +150 260
Unit V V V mA mW mW °C °C
Maximum Ratings are those values beyond which.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | KK4011B |
KODENSHI KOREA |
Quad 2-Input NAND Gate High-Voltage Silicon-Gate CMOS |
|
| 2 | KK4012B |
KODENSHI KOREA |
Dual 4-Input NAND Gate High-Voltage Silicon-Gate CMOS |
|
| 3 | KK4013B |
KODENSHI KOREA |
Dual D Flip-Flop |
|
| 4 | KK4015B |
KODENSHI KOREA |
Dual 4-Stage Static Shift Register |
|
| 5 | KK4017B |
KODENSHI KOREA |
Counter/Divider |
|
| 6 | KK4001B |
KODENSHI KOREA |
Quad 2-Input NOR Gate High-Voltage Silicon-Gate CMOS |
|
| 7 | KK4002B |
KODENSHI KOREA |
Dual 4-Input NOR Gate High-Voltage Silicon-Gate CMOS |
|
| 8 | KK4006B |
KODENSHI KOREA |
CMOS 18-Stage Static Shift Register |
|
| 9 | KK4020B |
KODENSHI KOREA |
14 Stage Ripple-Carry Binary Counter/Divider High-Voltage Silicon-Gate CMOS |
|
| 10 | KK4021B |
KODENSHI KOREA |
8-Bit Shift Register High-Voltage Silicon-Gate CMOS |
|
| 11 | KK4023B |
KODENSHI KOREA |
Triple 3-Input NAND Gate High-Voltage Silicon-Gate CMOS |
|
| 12 | KK4024B |
KODENSHI KOREA |
7 Stage Ripple-Carry Binary Counter/Divider High-Voltage Silicon-Gate CMOS |
|