www.DataSheet4U.com TECHNICAL DATA KK4011B Quad 2-Input NAND Gate High-Voltage Silicon-Gate CMOS The KK4011B NAND gates provide the system designer with direct emplementation of the NAND function. • Operating Voltage Range: 3.0 to 18 V • Maximum input current of 1 µA at 18 V over full package-temperature range; 100 nA at 18 V and 25°C • Noise margin (over.
tput Transistor Storage Temperature Lead Temperature, 1 mm from Case for 10 Seconds (Plastic DIP or SOIC Package) Value -0.5 to +20 -0.5 to VCC +0.5 -0.5 to VCC +0.5 ±10 750 500 100 -65 to +150 260 Unit V V V mA mW mW °C °C Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the Recommended Operating Conditions. +Derating - Plastic DIP: - 10 mW/°C from 65° to 125°C SOIC Package: : - 7 mW/°C from 65° to 125°C RECOMMENDED OPERATING CONDITIONS Symbol VCC VIN, VOUT TA Parameter DC Supply Voltage (Referenced to GND) DC Input.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | KK4012B |
KODENSHI KOREA |
Dual 4-Input NAND Gate High-Voltage Silicon-Gate CMOS | |
2 | KK4013B |
KODENSHI KOREA |
Dual D Flip-Flop | |
3 | KK4015B |
KODENSHI KOREA |
Dual 4-Stage Static Shift Register | |
4 | KK4017B |
KODENSHI KOREA |
Counter/Divider | |
5 | KK4019B |
KODENSHI KOREA |
Quad AND/OR Select Gate High-Voltage Silicon-Gate CMOS | |
6 | KK4001B |
KODENSHI KOREA |
Quad 2-Input NOR Gate High-Voltage Silicon-Gate CMOS | |
7 | KK4002B |
KODENSHI KOREA |
Dual 4-Input NOR Gate High-Voltage Silicon-Gate CMOS | |
8 | KK4006B |
KODENSHI KOREA |
CMOS 18-Stage Static Shift Register | |
9 | KK4020B |
KODENSHI KOREA |
14 Stage Ripple-Carry Binary Counter/Divider High-Voltage Silicon-Gate CMOS | |
10 | KK4021B |
KODENSHI KOREA |
8-Bit Shift Register High-Voltage Silicon-Gate CMOS | |
11 | KK4023B |
KODENSHI KOREA |
Triple 3-Input NAND Gate High-Voltage Silicon-Gate CMOS | |
12 | KK4024B |
KODENSHI KOREA |
7 Stage Ripple-Carry Binary Counter/Divider High-Voltage Silicon-Gate CMOS |