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www.DataSheet4U.com TECHNICAL DATA KK4001B Quad 2-Input NOR Gate High-Voltage Silicon-Gate CMOS The KK4001B NOR gates provide the system designer with direct emplementation of the NOR function. • Operating Voltage Range: 3.0 to 18 V • Maximum input current of 1 µA at 18 V over full package-temperature range; 100 nA at 18 V and 25°C • Noise margin (over fu.
utput Transistor Storage Temperature Lead Temperature, 1 mm from Case for 10 Seconds (Plastic DIP or SOIC Package) Value -0.5 to +20 -0.5 to VCC +0.5 ±10 500 500 100 -65 to +150 260 Unit V V mA mW mW °C °C Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the Recommended Operating Conditions. +Derating - Plastic DIP: - 12 mW/°C from 100° to 125°C SOIC Package: : - 7 mW/°C from 65° to 125°C RECOMMENDED OPERATING CONDITIONS Symbol VCC VIN, VOUT TA Parameter DC Supply Voltage (Referenced to GND) DC Input Voltage, Output .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | KK4002B |
KODENSHI KOREA |
Dual 4-Input NOR Gate High-Voltage Silicon-Gate CMOS |
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| 2 | KK4006B |
KODENSHI KOREA |
CMOS 18-Stage Static Shift Register |
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| 3 | KK4011B |
KODENSHI KOREA |
Quad 2-Input NAND Gate High-Voltage Silicon-Gate CMOS |
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| 4 | KK4012B |
KODENSHI KOREA |
Dual 4-Input NAND Gate High-Voltage Silicon-Gate CMOS |
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| 5 | KK4013B |
KODENSHI KOREA |
Dual D Flip-Flop |
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| 6 | KK4015B |
KODENSHI KOREA |
Dual 4-Stage Static Shift Register |
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| 7 | KK4017B |
KODENSHI KOREA |
Counter/Divider |
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| 8 | KK4019B |
KODENSHI KOREA |
Quad AND/OR Select Gate High-Voltage Silicon-Gate CMOS |
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| 9 | KK4020B |
KODENSHI KOREA |
14 Stage Ripple-Carry Binary Counter/Divider High-Voltage Silicon-Gate CMOS |
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| 10 | KK4021B |
KODENSHI KOREA |
8-Bit Shift Register High-Voltage Silicon-Gate CMOS |
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| 11 | KK4023B |
KODENSHI KOREA |
Triple 3-Input NAND Gate High-Voltage Silicon-Gate CMOS |
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| 12 | KK4024B |
KODENSHI KOREA |
7 Stage Ripple-Carry Binary Counter/Divider High-Voltage Silicon-Gate CMOS |
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