This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS= 500V, ID= 13A Drain-Source ON Resistance : RDS(ON)=0.44 (Max) @VGS = 10V Qg(typ.) = 35nC MAXIMUM RATING.
VDSS= 500V, ID= 13A Drain-Source ON Resistance : RDS(ON)=0.44 (Max) @VGS = 10V Qg(typ.) = 35nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING
SYMBOL
UNIT
KF13N50P KF13N50F
Drain-Source Voltage Gate-Source Voltage
VDSS VGSS
500 V 30 V
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy (Note 2)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
Drain Power Dissipation
Tc=25 Derate above 25
ID IDP EAS EAR dv/dt
PD
13 13
* 8 8
* 40 40
*
860
19.5
4.5 208 49.8 1.66 0.4
A
mJ mJ V/ns W W/
Maximum Junction Temperature Storage Temperature Range.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | KF13N50P |
KEC |
N-channel MOSFET | |
2 | KF13N60N |
KEC |
N CHANNEL MOS FIELD EFFECT TRANSISTOR | |
3 | KF13003A |
KINDFAIRY |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | |
4 | KF139 |
KEC |
SAW Filter | |
5 | KF139S |
KEC |
SAW Filter | |
6 | KF10N50F |
KEC |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR | |
7 | KF10N50FZ |
KEC |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR | |
8 | KF10N50P |
KEC |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR | |
9 | KF10N50PZ |
KEC |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR | |
10 | KF10N60F |
KEC |
N CHANNEL MOS FIELD EFFECT TRANSISTOR | |
11 | KF10N60P |
KEC |
N CHANNEL MOS FIELD EFFECT TRANSISTOR | |
12 | KF10N65F |
KEC |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |