K9K2G08U0A - Samsung semiconductor

K9K2G08U0A FLASH MEMORY

of Copy-back program is changed 4. TSOP package is deleted 1. CE access time : 23ns->35ns (p.9) 1. The value of tREA is changed. (18ns->20ns) 2. EDO mode is added. 1. The flow chart to creat the initial invalid block table is changed. 1. 1.8V FBGA spec is merged 2. 3.3V FBGA package is added 3. FBGA package size is changed to 9.5 x 12 4. Leaded part is delet.

Features

• Voltage Supply - 2.7 V ~3.6 V - 1.65V ~ 1.95V
• Organization - Memory Cell Array - (256M + 8,192K)bit x 8bit - Data Register - (2K + 64)bit x8bit
• Automatic Program and Erase - Page Program - (2K + 64)Byte - Block Erase - (128K + 4K)Byte
• Page Read Operation - Page Size - 2K-Byte - Random Read : 25µs(Max.) - Serial Access : 50ns(Min.)
• Fast Write Cycle Time - Program time : 300µs(Typ.) - Block Erase Time : 2ms(Typ.)
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection - Program/Erase Lockout During Power Transitions
• Reliable CMOS Floating-Gate Technology - Endurance : .