Offered in 256Mx8bit or 128Mx16bit, the K9K2GXXX0M is 2G bit with spare 64M bit capacity. Its NAND cell provides the most costeffective solution for the solid state mass storage market. A program operation can be performed in typical 300µs on the 2112-byte(X8 device) or 1056-word(X16 device) page and an erase operation can be performed in typical 2ms on a 12.
• Voltage Supply -1.8V device(K9K2GXXQ0M): 1.7V~1.95V -3.3V device(K9XXGXXUXM): 2.7 V ~3.6 V
• Organization - Memory Cell Array -X8 device(K9K2G08X0M) : (256M + 8,192K)bit x 8bit -X16 device(K9K2G16X0M) : (128M + 4,096K)bit x 16bit - Data Register -X8 device(K9K2G08X0M): (2K + 64)bit x8bit -X16 device(K9K2G16X0M): (1K + 32)bit x16bit - Cache Register -X8 device(K9K2G08X0M): (2K + 64)bit x8bit -X16 device(K9K2G16X0M): (1K + 32)bit x16bit
• Automatic Program and Erase - Page Program -X8 device(K9K2G08X0M): (2K + 64)Byte -X16 device(K9K2G16X0M): (1K + 32)Word - Block Erase -X8 device(K9K2G08X0M):.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | K9K2G08U0M-F |
Samsung semiconductor |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory | |
2 | K9K2G08U0M-FIB0 |
Samsung semiconductor |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory | |
3 | K9K2G08U0M-PCB0 |
Samsung semiconductor |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory | |
4 | K9K2G08U0M-PIB0 |
Samsung semiconductor |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory | |
5 | K9K2G08U0M-V |
Samsung semiconductor |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory | |
6 | K9K2G08U0M-VCB0 |
Samsung semiconductor |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory | |
7 | K9K2G08U0M-VIB0 |
Samsung |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory | |
8 | K9K2G08U0M-YCB0 |
Samsung |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory | |
9 | K9K2G08U0M-YIB0 |
Samsung |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory | |
10 | K9K2G08U0M |
Samsung semiconductor |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory | |
11 | K9K2G08U0A |
Samsung semiconductor |
FLASH MEMORY | |
12 | K9K2G08U1A |
Samsung semiconductor |
128M x 8 Bit / 256M x 8 Bit NAND Flash Memory |