K9K2G08U0M-VIB0 - Samsung

K9K2G08U0M-VIB0 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory

Offered in 256Mx8bit or 128Mx16bit, the K9K2GXXX0M is 2G bit with spare 64M bit capacity. Its NAND cell provides the most costeffective solution for the solid state mass storage market. A program operation can be performed in typical 300µs on the 2112byte(X8 device) or 1056-word(X16 device) page and an erase operation can be performed in typical 2ms on a 128.

Features

• Voltage Supply -1.8V device(K9K2GXXQ0M): 1.70V~1.95V -3.3V device(K9K2GXXU0M): 2.7 V ~3.6 V
• Organization - Memory Cell Array -X8 device(K9K2G08X0M) : (256M + 8,192K)bit x 8bit -X16 device(K9K2G16X0M) : (128M + 4,096K)bit x 16bit - Data Register -X8 device(K9K2G08X0M): (2K + 64)bit x8bit -X16 device(K9K2G16X0M): (1K + 32)bit x16bit - Cache Register -X8 device(K9K2G08X0M) : (2K + 64)bit x8bit -X16 device(K9K2G16X0M) : (1K + 32)bit x16bit
• Automatic Program and Erase - Page Program -X8 device(K9K2G08X0M) : (2K + 64)Byte -X16 device(K9K2G16X0M) : (1K + 32)Word - Block Erase -X8 device(K9K2G08.