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K9K2G08U0A |
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| Part Number | K9K2G08U0A |
| Manufacturer | Samsung semiconductor |
| Description | of Copy-back program is changed 4. TSOP package is deleted 1. CE access time : 23ns->35ns (p.9) 1. The value of tREA is changed. (18ns->20ns) 2. EDO mode is added. 1. The flow chart to creat the initi... |
| Features |
• Voltage Supply - 2.7 V ~3.6 V - 1.65V ~ 1.95V • Organization - Memory Cell Array - (256M + 8,192K)bit x 8bit - Data Register - (2K + 64)bit x8bit • Automatic Program and Erase - Page Program - (2K + 64)Byte - Block Erase - (128K + 4K)Byte • Page Read Operation - Page Size - 2K-Byte - Random Read : 25µs(Max.) - Serial Access : 50ns(Min.) • Fast Write Cycle Time - Program time : 300µs(Typ.) - Block Erase Time : 2ms(Typ.) • Command/Address/Data Multiplexed I/O Port • Hardware Data Protection - Program/Erase Lockout During Power Transitions • Reliable CMOS Floating-Gate Technology - Endurance : ... |
| Document |
 K9K2G08U0A Data Sheet
PDF 1.02MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | K9K2G08U0M |
Samsung semiconductor |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
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| 2 | K9K2G08U0M-F |
Samsung semiconductor |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
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| 3 | K9K2G08U0M-FCB0 |
Samsung semiconductor |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
|
| 4 | K9K2G08U0M-FIB0 |
Samsung semiconductor |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
|
| 5 | K9K2G08U0M-PCB0 |
Samsung semiconductor |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
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