K8D638UTM - Samsung semiconductor

K8D638UTM (K8D6x16UxM) 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory

The K8D6316U featuring single 3.0V power supply, is a 64Mbit NOR-type Flash Memory organized as 8Mx8 or 4M x16. The memory architecture of the device is designed to divide its memory arrays into 135 blocks to be protected by the block group. This block architecture provides highly flexible erase and program capability. The K8D6316U NOR Flash consists of two .

Features

• Single Voltage, 2.7V to 3.6V for Read and Write operations
• Organization 8,388,608 x 8 bit (Byte mode) / 4,194,304 x 16 bit (Word mode)
• Fast Read Access Time : 70ns
• Read While Program/Erase Operation
• Dual Bank architectures Bank 1 / Bank 2 : 16Mb / 48Mb
• Secode(Security Code) Block : Extra 64K Byte block
• Power Consumption (typical value @5MHz) - Read Current : 14mA - Program/Erase Current : 15mA - Read While Program or Read While Erase Current : 25mA - Standby Mode/Auto Sleep Mode : 10µA
• WP/ACC input pin - Allows special protection of two outermost boot blocks at VIL, regardless .