K8D1716UBB - Samsung

K8D1716UBB 16M Dual Bank NOR Flash Memory

The K8D1716U featuring single 3.0V power supply, is a 16Mbit NOR-type Flash Memory organized as 2Mx8 or 1M x16. The memory architecture of the device is designed to divide its memory arrays into 39 blocks to be protected by the block group. This block architecture provides highly flexible erase and program capability. The K8D1716U NOR Flash consists of two b.

Features

• Single Voltage, 2.7V to 3.6V for Read and Write operations
• Organization 1,048,576 x 16 bit (Word mode)
• Fast Read Access Time : 70ns
• Read While Program/Erase Operation
• Dual Bank architectures Bank 1 / Bank 2 : 8Mb / 8Mb
• Secode(Security Code) Block : Extra 64K Byte block
• Power Consumption (typical value @5MHz) - Read Current : 14mA - Program/Erase Current : 15mA - Read While Program or Read While Erase Current : 25mA - Standby Mode/Auto Sleep Mode : 5µA
• WP/ACC input pin - Allows special protection of two outermost boot blocks at VIL, regardless of block protect status - Removes s.