K8D3216U - Samsung

K8D3216U 32M-Bit (4M x8/2M x16) Dual Bank NOR Flash Memory

• Single Voltage, 2.7V to 3.6V for Read and Write operations • Organization 4,194,304 x 8 bit (Byte mode) / 2,097,152 x 16 bit (Word mode) • Fast Read Access Time : 70ns • Read While Program/Erase Operation • Dual Bank architectures Bank 1 / Bank 2 : 8Mb / 24Mb • Secode(Security Code) Block : Extra 64K Byte block • Power Consumption (typical value @5MHz) - .

Features

GENERAL DESCRIPTION
• Single Voltage, 2.7V to 3.6V for Read and Write operations
• Organization 4,194,304 x 8 bit (Byte mode) / 2,097,152 x 16 bit (Word mode)
• Fast Read Access Time : 70ns
• Read While Program/Erase Operation
• Dual Bank architectures Bank 1 / Bank 2 : 8Mb / 24Mb
• Secode(Security Code) Block : Extra 64K Byte block
• Power Consumption (typical value @5MHz) - Read Current : 14mA - Program/Erase Current : 15mA - Read While Program or Read While Erase Current : 25mA - Standby Mode/Auto Sleep Mode : 5µA
• WP/ACC input pin - Allows special protection of two outermost boot blocks.