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The K6F4016R4G families are fabricated by SAMSUNG′s advanced.
• Process Technology: Full CMOS
• Organization: 256K x16 bit
• Power Supply Voltage: 1.65~1.95V
• Low Data Retention Voltage: 1.0V(Min)
• Three State Outputs
• Package Type: 48-TBGA-6.00x7.00
GENERAL DESCRIPTION
The K6F4016R4G families are fabricated by SAMSUNG′s advanced.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | K6F4016R4G |
SAMSUNG Electronics |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
| 2 | K6F4016R4E |
Samsung semiconductor |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
| 3 | K6F4016R4E-F |
Samsung semiconductor |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
| 4 | K6F4016U4G |
Samsung semiconductor |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
| 5 | K6F4016U4G-F |
Samsung semiconductor |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
| 6 | K6F4016U6G |
Samsung semiconductor |
256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
| 7 | K6F4016U6G-F |
Samsung semiconductor |
256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
| 8 | K6F4008R2C |
Samsung semiconductor |
512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
| 9 | K6F4008U2E |
Samsung semiconductor |
512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
| 10 | K6F4008U2G |
Samsung semiconductor |
512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
| 11 | K6F1008R2M |
Samsung Electronics |
SRAM |
|
| 12 | K6F1008S2M |
Samsung Electronics |
SRAM |
|