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K6F4008R2C Family CMOS SRAM Document Title 512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial Draft 1.0 Finalized - Errata correction - Change for tWP: 55 to 50ns for 70ns product - Change for tWHZ: 25 to 20ns for 70ns product Draft Date July 28, 1999 May 4, 2000 Remark Preliminary Final T.
• Process Technology: Full CMOS
• Organization: 512K x8 bit
• Power Supply Voltage: 1.65~2.2V
• Low Data Retention Voltage: 1.0V(Min)
• Three state output status and TTL Compatible
• Package Type: 48-FBGA-6.5.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | K6F4008U2E |
Samsung semiconductor |
512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
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| 2 | K6F4008U2G |
Samsung semiconductor |
512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
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| 3 | K6F4016R4E |
Samsung semiconductor |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
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| 4 | K6F4016R4E-F |
Samsung semiconductor |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
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| 5 | K6F4016R4G |
SAMSUNG Electronics |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
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| 6 | K6F4016R4G-F |
Samsung semiconductor |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
| 7 | K6F4016U4G |
Samsung semiconductor |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
| 8 | K6F4016U4G-F |
Samsung semiconductor |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
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| 9 | K6F4016U6G |
Samsung semiconductor |
256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
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| 10 | K6F4016U6G-F |
Samsung semiconductor |
256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
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| 11 | K6F1008R2M |
Samsung Electronics |
SRAM |
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| 12 | K6F1008S2M |
Samsung Electronics |
SRAM |
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