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K6F1008S2M - Samsung Electronics

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K6F1008S2M SRAM

The K6F1008V2M, K6F1008S2M and K6F1008R2M families are fabricated by SAMSUNG′s advanced Full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current..

Features


• Process Technology: Full CMOS
• Organization: 128K x8 bit
• Power Supply Voltage K6F1008V2M Family: 3.0V ~ 3.6V K6F1008S2M Family: 2.3V ~ 3.3V K6F1008R2M Family: 1.8V ~ 2.7V
• Low Data Retention Voltage: 1.5V(Min)
• Three state output and TTL Compatible
• Package Type: 32-SOP-525, 32-TSOP1-0820F, 32-TSOP1-0813.4F, 48-CSP GENERAL DESCRIPTION The K6F1008V2M, K6F1008S2M and K6F1008R2M families are fabricated by SAMSUNG′s advanced Full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The famil.

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