The K6F4008U2E families are fabricated by SAMSUNG′s advanced full CMOS process technology. The f.
• Process Technology: Full CMOS
• Organization: 512K x8 bit
• Power Supply Voltage: 2.7~3.3V
• Low Data Retention Voltage: 1.5V(Min)
• Three State Outputs
• Package Type: 48(36)-TBGA-6.00x7.00
GENERAL DESCRIPTION
The K6F4008U2E families are fabricated by SAMSUNG′s advanced full CMOS process technology. The f.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | K6F4008U2G |
Samsung semiconductor |
512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
2 | K6F4008R2C |
Samsung semiconductor |
512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
3 | K6F4016R4E |
Samsung semiconductor |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
4 | K6F4016R4E-F |
Samsung semiconductor |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
5 | K6F4016R4G |
SAMSUNG Electronics |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
6 | K6F4016R4G-F |
Samsung semiconductor |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
7 | K6F4016U4G |
Samsung semiconductor |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
8 | K6F4016U4G-F |
Samsung semiconductor |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
9 | K6F4016U6G |
Samsung semiconductor |
256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
10 | K6F4016U6G-F |
Samsung semiconductor |
256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
11 | K6F1008R2M |
Samsung Electronics |
SRAM | |
12 | K6F1008S2M |
Samsung Electronics |
SRAM |