2SK3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSIV) 2SK3878 Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) • Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Uni.
nuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Character.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | K3870-01 |
Fuji |
N-CHANNEL SILICON POWER MOSFET | |
2 | K3816 |
ON Semiconductor |
2SK3816 | |
3 | K383 |
Hitachi |
Silicon N-Channel MOS FET | |
4 | K3831 |
Sanyo Semicon Device |
2SK3831 | |
5 | K3842 |
Toshiba Semiconductor |
2SK3842 | |
6 | K385 |
ETC |
Transistor | |
7 | K3850 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
8 | K3868 |
Toshiba Semiconductor |
2SK3868 | |
9 | K3869 |
Toshiba Semiconductor |
2SK3869 | |
10 | K3880 |
Toshiba |
2SK3880 | |
11 | K389 |
Toshiba Semiconductor |
2SK389 | |
12 | K300 |
Aeroflex |
Silicon Zener Diodes |