K3869 - Toshiba Semiconductor

K3869 2SK3869

2SK3869 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK3869 Switching Regulator Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 0.55 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.5 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 450 V) • Enhancement model: Vth = 2.0 to 4.0 V (VD.

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usly under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characterist.