K3850 - Sanyo Semicon Device

K3850 N-Channel Silicon MOSFET

Ordering number : ENN8193 2SK3850 2SK3850 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Best suited for motor drive. • Low ON-resistance. • Low Qg. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissi.

Features

• Best suited for motor drive.
• Low ON-resistance.
• Low Qg. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10µs, duty cycle≤1% Tc=25°C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input .