K3816 - ON Semiconductor

K3816 2SK3816

Ordering number : EN8054A 2SK3816 N-Channel Power MOSFET 60V, 40A, 26mΩ, TO-262-3L/TO-263-2L http://onsemi.com Features • ON-resistance RDS(on)1=20mΩ(typ.) • Input capacitance Ciss=1780pF(typ.) • 4V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current .

Features

• ON-resistance RDS(on)1=20mΩ(typ.)
• Input capacitance Ciss=1780pF(typ.)
• 4V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings 60 ±20 40 160 1.65 50 Unit V V A A W W Continued on next page. Package Dimensions unit : mm (typ) 7537-001 Package Dimensions unit : mm (typ) 7535-001 2SK3816-1E 10.0 4.5 8.0 1.3 10.0 4 4.5 1.3 2SK3816-DL-1E 8.0 0.9 1.75 1.4 9.2 1.2 13.4 .