K3510 - Renesas

K3510 N-Channel Power MOSFET

The 2SK3510 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER PACKAGE 2SK3510 TO-220AB FEATURES • Super low on-state resistance: RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low Ciss: Ciss = 8500 pF TYP. • Built-in gate protection diode 2SK3510-S TO-262 2SK3510-ZJ 2SK3510-Z.

Features

• Super low on-state resistance: RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 42 A)
• Low Ciss: Ciss = 8500 pF TYP.
• Built-in gate protection diode 2SK3510-S TO-262 2SK3510-ZJ 2SK3510-Z TO-263 TO-220SMDNote Note TO-220SMD package is produced only in Japan. (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 75 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 ID(DC) ID(pulse) ±83 ±332 A A Total Power Dissipation (TC = 25°C) PT1 125 W Total Power Dissipation (TA = 25°C) Channel Tempe.