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K3510 |
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| Part Number | K3510 |
| Manufacturer | Renesas (https://www.renesas.com/) |
| Description | The 2SK3510 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER PACKAGE 2SK3510 TO-220AB FEATURES • Super low on-state res... |
| Features |
• Super low on-state resistance: RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low Ciss: Ciss = 8500 pF TYP. • Built-in gate protection diode 2SK3510-S TO-262 2SK3510-ZJ 2SK3510-Z TO-263 TO-220SMDNote Note TO-220SMD package is produced only in Japan. (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 75 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 ID(DC) ID(pulse) ±83 ±332 A A Total Power Dissipation (TC = 25°C) PT1 125 W Total Power Dissipation (TA = 25°C) Channel Tempe... |
| Document |
 K3510 Data Sheet
PDF 149.62KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | K3511 |
Kexin |
MOS Field Effect Transistor |
|
| 2 | K3511 |
Renesas |
MOS FIELD EFFECT TRANSISTOR |
|
| 3 | K3515-01MR |
Fuji Electric |
2SK3515-01MR |
|
| 4 | K3518 |
Fuji Semiconductors |
2SK3518 |
|
| 5 | K3519PQ-XH |
KEC |
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor |
|