www.DataSheet4U.com co Super FAP-G .Series U 4 t Features e High speed switching e h Low on-resistance Sbreadown No secondary a t power Low driving a Avalanche-proof .D w wApplications regulators w Switching UPS (Uninterruptible Power Supply) DC-DC converters (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drai.
e High speed switching e h Low on-resistance Sbreadown No secondary a t power Low driving a Avalanche-proof .D w wApplications regulators w Switching UPS (Uninterruptible Power Supply)
DC-DC converters
(Tc=25°C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Symbol V DS ID ID(puls] VGS IAR
*2 EAS
*1 dVDS/dt
*4 dV/dt
*3 PD Ta=25°C Tc=25°C
2SK3518-01MR m
FUJI POWER MOSFET200303
N-CHANNEL SILICON.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | K3510 |
Renesas |
N-Channel Power MOSFET | |
2 | K3511 |
Kexin |
MOS Field Effect Transistor | |
3 | K3511 |
Renesas |
MOS FIELD EFFECT TRANSISTOR | |
4 | K3515-01MR |
Fuji Electric |
2SK3515-01MR | |
5 | K3519PQ-XH |
KEC |
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor | |
6 | K350 |
Hitachi |
Silicon N-Channel MOSFET | |
7 | K3500G |
MTRONPTI |
Clock Oscillator | |
8 | K3502-01MR |
Fuji Electric |
2SK3502-01MR | |
9 | K3503FC450 |
IXYS |
Medium Voltage Thyristor | |
10 | K3503FC460 |
IXYS |
Medium Voltage Thyristor | |
11 | K3503FC480 |
IXYS |
Medium Voltage Thyristor | |
12 | K3503FC500 |
IXYS |
Medium Voltage Thyristor |