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K3518 - Fuji Semiconductors

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K3518 2SK3518

www.DataSheet4U.com co Super FAP-G .Series U 4 t Features e High speed switching e h Low on-resistance Sbreadown No secondary a t power Low driving a Avalanche-proof .D w wApplications regulators w Switching UPS (Uninterruptible Power Supply) DC-DC converters (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drai.

Features

e High speed switching e h Low on-resistance Sbreadown No secondary a t power Low driving a Avalanche-proof .D w wApplications regulators w Switching UPS (Uninterruptible Power Supply) DC-DC converters (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Symbol V DS ID ID(puls] VGS IAR
*2 EAS
*1 dVDS/dt
*4 dV/dt
*3 PD Ta=25°C Tc=25°C 2SK3518-01MR m FUJI POWER MOSFET200303 N-CHANNEL SILICON.

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