The K3519PQ-XH is a Dual N-channel MOSFET designed for use as a bi-directional load switch, facilitated by its common-drain configuration. K3519PQ-XH www.DataSheet4U.com Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor 2000 FEATURES ¡⁄ Low on-state resistance RDS(ON)1 = 16m¥ MAX (VGS=4.5V, IS=1.0A) RDS(ON)2 = 17m¥ MAX (VGS=3.9V, IS=1.
¡⁄ Low on-state resistance RDS(ON)1 = 16m¥ MAX (VGS=4.5V, IS=1.0A) RDS(ON)2 = 17m¥ MAX (VGS=3.9V, IS=1.0A) RDS(ON)3 = 20m¥ MAX (VGS=3.5V, IS=1.0A) S1 S2 1080 G1 G2 BOTTOM : COMMON DRAIN _10 180 + MAXIMUM RATING (Ta=25¡ CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Storage Temperature Range Unless otherwise noted) RATING 24 ¡ -55¡› 12 150 ¡ UNIT V V SYMBOL VDSS VGSS Tstg Equivalent Circuit D D G1 Rg G2 Rg S1 S2 2010. 4. 29 Revision No : 0 1/3 K3519PQ-XH Electrical Characteristics (Ta=25¡ CHARACTERISTIC Drain to Source Breakdown Voltage Gate to Source Breakdown V.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | K3510 |
Renesas |
N-Channel Power MOSFET | |
2 | K3511 |
Kexin |
MOS Field Effect Transistor | |
3 | K3511 |
Renesas |
MOS FIELD EFFECT TRANSISTOR | |
4 | K3515-01MR |
Fuji Electric |
2SK3515-01MR | |
5 | K3518 |
Fuji Semiconductors |
2SK3518 | |
6 | K350 |
Hitachi |
Silicon N-Channel MOSFET | |
7 | K3500G |
MTRONPTI |
Clock Oscillator | |
8 | K3502-01MR |
Fuji Electric |
2SK3502-01MR | |
9 | K3503FC450 |
IXYS |
Medium Voltage Thyristor | |
10 | K3503FC460 |
IXYS |
Medium Voltage Thyristor | |
11 | K3503FC480 |
IXYS |
Medium Voltage Thyristor | |
12 | K3503FC500 |
IXYS |
Medium Voltage Thyristor |