SHINDENGEN VX-2 Series Power MOSFET N-Channel Enhancement type 2SK2799 (F10F35VX2) 350V 10A OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. APPLICATION Switching power supply of AC 100V input High voltage.
Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast.
APPLICATION
Switching power supply of AC 100V input High voltage power supply Inverter
RATINGS
VX-2 Series Power MOSFET
2SK2799 ( F10F35VX2 )
●Electrical Characteristics Tc = 25℃
Item
Symbol
Conditions
Drain-Source Breakdown Voltage
V(BR)DSS ID = 1mA, VGS = 0V
Zero Gate Voltage Drain Current
IDSS VDS = 350V, VGS = 0V
Gate-Source Leakage Current
IGSS VGS = ±30V, VDS = 0V
Forward Transconductance
gfs ID = 5A, VDS = 10V
Static Drain-Source .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | K2792 |
ROHM |
2SK2792 | |
2 | K2796 |
Hitachi Semiconductor |
2SK2796 | |
3 | K270 |
Aeroflex |
Silicon Zener Diodes | |
4 | K270 |
Knox Inc |
LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE | |
5 | K2700 |
Toshiba Semiconductor |
2SK2700 | |
6 | K2708 |
Sanken |
2SK2708 | |
7 | K2711 |
Rohm |
2SK2711 | |
8 | K2715 |
Rohm |
2SK2715 | |
9 | K2717 |
Toshiba |
Silicon N Channel MOS Type Field Effect Transistor | |
10 | K2718 |
Toshiba Semiconductor |
2SK2718 | |
11 | K2719 |
Toshiba Semiconductor |
N-Channel MOS Type Field Effect Transistor | |
12 | K2723 |
NEC |
2SK2723 |