2SK2717 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2717 DC−DC Converter and Motor Drive Applications Unit: mm l Low drain−source ON resistance : RDS (ON) = 2.3 Ω (typ.) l High forward transfer admittance : |Yfs| = 4.4 S (typ.) l Low leakage current : IDSS = 100 µA (max) (VDS = 720 V) l Enhancement−mode : Vth = 2.0~4.0 V .
istance, channel to case Thermal resistance, channel to ambient Rth (ch−c) Rth (ch−a) 2.78 62.5 °C / W °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 43.6 mH, RG = 25 Ω, IAR = 5 A Note 3: Repetitive rating; Pulse width limited by maximum channel temperature. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2002-09-02 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Gate leakage current Gate−source breakdown voltage Drain cut−off cur.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | K2711 |
Rohm |
2SK2711 | |
2 | K2715 |
Rohm |
2SK2715 | |
3 | K2718 |
Toshiba Semiconductor |
2SK2718 | |
4 | K2719 |
Toshiba Semiconductor |
N-Channel MOS Type Field Effect Transistor | |
5 | K270 |
Aeroflex |
Silicon Zener Diodes | |
6 | K270 |
Knox Inc |
LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE | |
7 | K2700 |
Toshiba Semiconductor |
2SK2700 | |
8 | K2708 |
Sanken |
2SK2708 | |
9 | K2723 |
NEC |
2SK2723 | |
10 | K2725 |
Renesas Technology |
2SK2725 | |
11 | K2726 |
Renesas |
Silicon N-Channel MOSFET | |
12 | K2728 |
Hitachi |
2SK2728 |