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Transistors Switching (600V, 4A) 2SK2792 FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaran- teed to be ±30V. 5) Easily designed drive circuits. 6) Easy to parallel. FExternal dimensions (Units: mm) FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FPac.
1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaran- teed to be ±30V. 5) Easily designed drive circuits. 6) Easy to parallel. FExternal dimensions (Units: mm) FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications 158 Transistors FElectrical characteristics (Ta = 25_C) 2SK2792 FElectrical characteristic curves 159 Transistors 2SK2792 160 Transistors 2SK2792 FSwitching characteristics Fmeasurement circuit 161 Appendix Notes No technical content pages of this document m.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | K2796 |
Hitachi Semiconductor |
2SK2796 |
|
| 2 | K2799 |
Shindengen Electric |
2SK2799 |
|
| 3 | K270 |
Aeroflex |
Silicon Zener Diodes |
|
| 4 | K270 |
Knox Inc |
LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE |
|
| 5 | K2700 |
Toshiba Semiconductor |
2SK2700 |
|
| 6 | K2708 |
Sanken |
2SK2708 |
|
| 7 | K2711 |
Rohm |
2SK2711 |
|
| 8 | K2715 |
Rohm |
2SK2715 |
|
| 9 | K2717 |
Toshiba |
Silicon N Channel MOS Type Field Effect Transistor |
|
| 10 | K2718 |
Toshiba Semiconductor |
2SK2718 |
|
| 11 | K2719 |
Toshiba Semiconductor |
N-Channel MOS Type Field Effect Transistor |
|
| 12 | K2723 |
NEC |
2SK2723 |
|