2SK2796(L), 2SK2796(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.12Ω typ. • 4V gate drive devices. • High speed switching Outline DPAK |1 D G S ADE-208-534C (Z) 4th. Edition Jun 1998 44 12 3 12 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2796(L), 2SK2796(S) Absolute Maximum Ratings (Ta = 25°C) Item Sy.
• Low on-resistance RDS(on) = 0.12Ω typ.
• 4V gate drive devices.
• High speed switching
Outline
DPAK |1
D G
S
ADE-208-534C (Z) 4th. Edition Jun 1998
44
12 3
12 3
1. Gate 2. Drain 3. Source 4. Drain
2SK2796(L), 2SK2796(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation
VDSS VGSS ID I Note1
D(pulse)
I DR I Note3
AP
E Note3 AR
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Note:
1. PW ≤ 10µs, dut.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | K2792 |
ROHM |
2SK2792 | |
2 | K2799 |
Shindengen Electric |
2SK2799 | |
3 | K270 |
Aeroflex |
Silicon Zener Diodes | |
4 | K270 |
Knox Inc |
LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE | |
5 | K2700 |
Toshiba Semiconductor |
2SK2700 | |
6 | K2708 |
Sanken |
2SK2708 | |
7 | K2711 |
Rohm |
2SK2711 | |
8 | K2715 |
Rohm |
2SK2715 | |
9 | K2717 |
Toshiba |
Silicon N Channel MOS Type Field Effect Transistor | |
10 | K2718 |
Toshiba Semiconductor |
2SK2718 | |
11 | K2719 |
Toshiba Semiconductor |
N-Channel MOS Type Field Effect Transistor | |
12 | K2723 |
NEC |
2SK2723 |