www.DataSheet4U.com Power F-MOS FETs 2SK2128 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 15mJ q VGSS = ±20V guaranteed q High-speed switching: tf = 35ns q No secondary breakdown unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 s Applications 4.1±0.2 8.0±0.2 Solder Dip 13.7–0.2 q Contactless relay q Diving circuit f.
q Avalanche energy capacity guaranteed: EAS > 15mJ q VGSS = ±20V guaranteed q High-speed switching: tf = 35ns q No secondary breakdown
unit: mm
4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2
s Applications
4.1±0.2 8.0±0.2 Solder Dip
13.7
–0.2
q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply
15.0±0.3
3.0±0.2
+0.5
1.2±0.15 1.45±0.15 0.75±0.1 2.54±0.2 5.08±0.4
2.6±0.1 0.7±0.1
s Absolute Maximum Ratings (TC = 25°C)
Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | K2129 |
ETC |
2SK2129 | |
2 | K210 |
Aeroflex |
Silicon Zener Diodes | |
3 | K210 |
Knox Semiconductor |
LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE | |
4 | K210 |
Knox Inc |
LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE | |
5 | K210 |
Toshiba Semiconductor |
2SK210 | |
6 | K2101 |
Fuji Electric |
2SK2101 | |
7 | K2111 |
Kexin |
MOS Field Effect Transistor | |
8 | K2111 |
NEC |
2SK2111 | |
9 | K2114 |
Hitachi Semiconductor |
2SK2114 | |
10 | K2115 |
Hitachi Semiconductor |
2SK2115 | |
11 | K2131 |
NEC |
2SK2131 | |
12 | K2132 |
NEC |
2SK2132 |