2SK2114, 2SK2115 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for Switching regulator Outline TO-220CFM D 12 3 1. Gate G 2. Drain 3. Source S 2SK2114, 2SK2115 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2S.
• Low on-resistance
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for Switching regulator
Outline
TO-220CFM
D 12 3 1. Gate
G 2. Drain 3. Source
S
2SK2114, 2SK2115
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
2SK2114
2SK2115
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C
Symbol VDSS VDSS VGSS ID I
*1
D(pulse)
I DR Pch
*2 Tch Tstg
Ratings 450 500 ±30 5 20 5 3.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | K2111 |
Kexin |
MOS Field Effect Transistor | |
2 | K2111 |
NEC |
2SK2111 | |
3 | K2114 |
Hitachi Semiconductor |
2SK2114 | |
4 | K210 |
Aeroflex |
Silicon Zener Diodes | |
5 | K210 |
Knox Semiconductor |
LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE | |
6 | K210 |
Knox Inc |
LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE | |
7 | K210 |
Toshiba Semiconductor |
2SK210 | |
8 | K2101 |
Fuji Electric |
2SK2101 | |
9 | K2128 |
ETC |
2SK2128 | |
10 | K2129 |
ETC |
2SK2129 | |
11 | K2131 |
NEC |
2SK2131 | |
12 | K2132 |
NEC |
2SK2132 |