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SMD Type MOS Field Effect Transistor 2SK2111 MOSFICET Features Low on-resistance RDS(on)=0.6 MAX.@VGS=4.0V,ID=0.5A High switching speed SOT-89 4.50+0.1 -0.1 1.80+0.1 -0.1 12 3 0.48+0.1 -0.1 0.53+0.1 -0.1 +0.12.50 -0.1 +0.14.00 -0.1 Unit: mm 1.50+0.1 -0.1 0.44+0.1 -0.1 +0.10.80 -0.1 +0.12.60 -0.1 3.00+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Para.
Low on-resistance RDS(on)=0.6 MAX.@VGS=4.0V,ID=0.5A High switching speed
SOT-89
4.50+0.1 -0.1
1.80+0.1 -0.1
12 3
0.48+0.1 -0.1
0.53+0.1 -0.1
+0.12.50 -0.1
+0.14.00 -0.1
Unit: mm 1.50+0.1
-0.1
0.44+0.1 -0.1
+0.10.80 -0.1
+0.12.60 -0.1
3.00+0.1 -0.1
Absolute Maximum Ratings Ta = 25
Parameter Drain to source voltage Gate to source voltage
Drain current
Power dissipation
* Channel temperature Storage temperature
* 16 cm2X0.7mm,ceramic substrate used
Symbol VDSS VGSS ID Idp PD Tch Tstg
Rating 60 20 1.0 2.0 2.0 150
-55 to +150
Unit V V A A W
Electrical Characteristics Ta = 25
Parameter .
K2111 - NEC
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2111 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2111 is a N-channel MO.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | K2114 |
Hitachi Semiconductor |
2SK2114 |
|
| 2 | K2115 |
Hitachi Semiconductor |
2SK2115 |
|
| 3 | K210 |
Aeroflex |
Silicon Zener Diodes |
|
| 4 | K210 |
Knox Semiconductor |
LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE |
|
| 5 | K210 |
Knox Inc |
LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE |
|
| 6 | K210 |
Toshiba Semiconductor |
2SK210 |
|
| 7 | K2101 |
Fuji Electric |
2SK2101 |
|
| 8 | K2128 |
ETC |
2SK2128 |
|
| 9 | K2129 |
ETC |
2SK2129 |
|
| 10 | K2131 |
NEC |
2SK2131 |
|
| 11 | K2132 |
NEC |
2SK2132 |
|
| 12 | K2134 |
NEC |
2SK2134 |
|