K2114 - Hitachi Semiconductor

K2114 2SK2114

2SK2114, 2SK2115 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for Switching regulator Outline TO-220CFM D 12 3 1. Gate G 2. Drain 3. Source S 2SK2114, 2SK2115 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2S.

Features

• Low on-resistance
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for Switching regulator Outline TO-220CFM D 12 3 1. Gate G 2. Drain 3. Source S 2SK2114, 2SK2115 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK2114 2SK2115 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C Symbol VDSS VDSS VGSS ID I
*1 D(pulse) I DR Pch
*2 Tch Tstg Ratings 450 500 ±30 5 20 5 3.