IXYB82N120C3H1 - IXYS Corporation

IXYB82N120C3H1 High-Speed IGBT

1200V XPT TM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching IXYB82N120C3H1 VCES IC110 VCE(sat) tfi(typ) PLUS264TM = = ≤ = 1200V 82A 3.2V 93ns Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 IF110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC .

Features

z z z z z z z Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Force 300 260 30..120 / 6.7..27 10 Optimized for Low Switching Losses Square RBSOA Anti-Parallel Ultra Fast Diode Positive Thermal Coefficient of Vce(sat) Avalanche Rated High Current Handling Capability International Standard Package Advantages z z High Power Density Low Gate Drive Requirement Applications Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250μA, VGE = 0V = 250μA, VCE = VGE TJ = 125°C 2.75 3.50 Characteristic Values Min..