IXYA8N90C3D1 - IXYS

IXYA8N90C3D1 IGBT

900V XPTTM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching IXYA8N90C3D1 IXYP8N90C3D1 Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient 900 V 900 V ±20 V ±30 V TC = 25°C TC = 110°C TC.

Features

 Optimized for Low Switching Losses
 Square RBSOA
 Positive Thermal Coefficient of Vce(sat)
 Anti-Parallel Ultra Fast Diode
 Avalanche Rated
 International Standard Packages Advantages
 High Power Density
 Low Gate Drive Requirement Applications
 High Frequency Power Inverters
 UPS
 Motor Drives
 SMPS
 PFC Circuits
 Battery Chargers
 Welding Machines
 Lamp Ballasts © 2014 IXYS CORPORATION, All Rights Reserved DS100400C(12/14) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs IC = 8A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Q.