IXYA20N65C3D1 - IXYS

IXYA20N65C3D1 IGBT

XPTTM 650V IGBT GenX3TM w/Diode IXYA20N65C3D1 IXYP20N65C3D1 Extreme Light Punch Through IGBT for 20-60kHz Switching Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient 650 V 650 V ±20 V .

Features

 Optimized for 20-60kHz Switching
 Square RBSOA
 Avalanche Rated
 Anti-Parallel Fast Diode
 Short Circuit Capability
 International Standard Packages Advantages
 High Power Density
 Extremely Rugged
 Low Gate Drive Requirement Applications
 Power Inverters
 UPS
 Motor Drives
 SMPS
 PFC Circuits
 Battery Chargers
 Welding Machines
 Lamp Ballasts
 High Frequency Power Inverters DS100576C(3/15) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs IC = 20A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 20A, VGE = 15V, VC.