IXXH50N60C3D1 - IXYS

IXXH50N60C3D1 600V IGBT

XPTTM 600V IGBT GenX3TM w/ Diode IXXH50N60C3D1 Extreme Light Punch Through IGBT for 20-60 kHz Switching VCES = 600V I = 50A C110 V  2.30V CE(sat) tfi(typ) = 42ns Symbol VCES V CGR VGES VGEM I C25 IC110 IF110 ICM I A EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM T stg TL M d Weight Test Conditions TJ = 25°C to 175°C T J = 25°C to 175°C, R GE = .

Features

 Optimized for 20-60kHz Switching
 Square RBSOA
 Anti-Parallel Ultra Fast Diode
 Avalanche Capability
 Short Circuit Capability
 International Standard Package Advantages
 High Power Density
 175°C Rated
 Extremely Rugged
 Low Gate Drive Requirement Applications
 Power Inverters
 UPS
 Motor Drives
 SMPS
 PFC Circuits
 Battery Chargers
 Welding Machines
 Lamp Ballasts © 2023 Littelfuse, Inc. DS100274B(5/23) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs IC = 36A, VCE = 10V, Note 1 Cies Coes Cres V = 25V, V = 0V, f = 1MHz CE GE Qg Qge IC = 36A, VG.