Preliminary Technical Information XPTTM 650V IGBT GenX4TM Extreme Light Punch Through IGBT for 5-30kHz Switching IXXH30N65B4 C G E VCES = IC110 = V ≤CE(sat) tfi(typ) = 650V 30A 2.0V 57ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ C.
z Optimized for 5-30kHz Switching z Square RBSOA z Short Circuit Capability z International Standard Package Advantages z High Power Density z Extremely Rugged z Low Gate Drive Requirement Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES IC = 250μA, VGE = 0V VGE(th) IC = 250μA, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 150°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 30A, VGE = 15V, Note 1 TJ = 150°C Characteristic Values Min. Typ. Max. 650 V 4.0 6.5 V 10 μA 250 μA ±100 nA 1.66 1.87 2.00 V V Applications z Power Inverters z UPS z Motor Drives z SMPS .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXXH30N60C3 |
IXYS |
600V IGBTs | |
2 | IXXH30N60C3D1 |
IXYS |
600V IGBTs | |
3 | IXXH100N60B3 |
IXYS |
IGBT | |
4 | IXXH100N60C3 |
IXYS |
IGBT | |
5 | IXXH110N65B4 |
IXYS |
650V IGBT | |
6 | IXXH110N65C4 |
IXYS |
IGBT | |
7 | IXXH150N60C3 |
IXYS |
IGBT | |
8 | IXXH40N65B4 |
IXYS |
650V IGBTs | |
9 | IXXH50N60B3 |
IXYS |
600V IGBTs | |
10 | IXXH50N60C3D1 |
IXYS |
600V IGBT | |
11 | IXXA30N65C3HV |
IXYS |
650V IGBTs | |
12 | IXXA50N60B3 |
IXYS |
600V IGBTs |